Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature

Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain c...

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Bibliographic Details
Published inMaterials Science Forum Vol. 858; pp. 860 - 863
Main Authors Yokoseki, Takashi, Murata, Koichi, Ohshima, Takeshi, Kandori, Mikio, Abe, Hiroshi, Matsuda, Takuma, Takeyama, Akinori, Mitomo, Satoshi, Onoda, Shinobu, Yoshie, Toru, Hijikata, Yasuto, Tanaka, Yuki, Makino, Takahiro
Format Journal Article
LanguageEnglish
Published Pfaffikon Trans Tech Publications Ltd 24.05.2016
Subjects
Drains
Electric potential
Electric power generation
Gates
Irradiation
MOSFETs
Silicon carbide
Voltage
Gamma-Ray Irradiation
High Temperature
MOSFET
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ISBN3035710422
9783035710427
ISSN0255-5476
1662-9752
1662-9752
DOI10.4028/www.scientific.net/MSF.858.860

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Summary:Radiation response of 4H-SiC vertical power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) was investigated at 150°C up to 10.4 MGy. Until irradiation at 1.2 MGy, the drain current – gate voltage curves of the SiC MOSFETs shifted to the negative voltage side, and the leakage of drain current at gate voltages below threshold voltage increased with increasing absorbed dose. However, no significant change in the electrical characteristics of SiC MOSFETs was observed at doses above 1.2 MGy. For blocking characteristics, there were no degradations of the SiC MOSFETs irradiated at 150°C even after irradiated at 10.4 MGy.
Bibliography:Selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
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ISBN:3035710422
9783035710427
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.858.860