Influence of growth rate on the carbon contamination and luminescence of GaN grown on silicon

The unintentional carbon doping concentration of GaN films grown by low pressure metal organic chemical vapor deposition （LP-MOCVD） depends strongly on the growth rate. The concentration of carbon is varied from 2.9 × 1017 to 5.7 × 10^18 cm-3 when the growth rate increases from 2.0 to 7.2 μm/h, as d...

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Published inJournal of semiconductors Vol. 36; no. 9; pp. 26 - 29
Main Author 毛清华 刘军林 吴小明 张建立 熊传兵 莫春兰 张萌 江风益
Format Journal Article
LanguageEnglish
Published 01.09.2015
Subjects
Carbon
Gallium nitrides
GaN薄膜
Low pressure
Luminescence
MOCVD
Origins
Secondary ion mass spectroscopy
Semiconductors
Silicon substrates
低压金属有机化学气相沉积
发光特性
浓度范围
生长速率
碳污染
蓝色发光
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ISSN1674-4926
DOI10.1088/1674-4926/36/9/093003

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Summary:The unintentional carbon doping concentration of GaN films grown by low pressure metal organic chemical vapor deposition （LP-MOCVD） depends strongly on the growth rate. The concentration of carbon is varied from 2.9 × 1017 to 5.7 × 10^18 cm-3 when the growth rate increases from 2.0 to 7.2 μm/h, as detected by secondary ion mass spectroscopy. It is shown that the presence of N vacancies give rises to high carbon concentration. We show that a reduction of the carbon concentration by one order of magnitude compared to the regular sample with nearly same growth rate can be achieved by operating at an extremely high NH3 partial pressure during growth. The intensity ratios of yellow and blue luminescence to band edge luminescence in the samples are found to depend significantly on carbon concentration. The present results demonstrate direct and quantitative evidence that the carbon related defects are the origin of yellow and blue luminescence.
Bibliography:11-5781/TN
The unintentional carbon doping concentration of GaN films grown by low pressure metal organic chemical vapor deposition （LP-MOCVD） depends strongly on the growth rate. The concentration of carbon is varied from 2.9 × 1017 to 5.7 × 10^18 cm-3 when the growth rate increases from 2.0 to 7.2 μm/h, as detected by secondary ion mass spectroscopy. It is shown that the presence of N vacancies give rises to high carbon concentration. We show that a reduction of the carbon concentration by one order of magnitude compared to the regular sample with nearly same growth rate can be achieved by operating at an extremely high NH3 partial pressure during growth. The intensity ratios of yellow and blue luminescence to band edge luminescence in the samples are found to depend significantly on carbon concentration. The present results demonstrate direct and quantitative evidence that the carbon related defects are the origin of yellow and blue luminescence.
GaN optoelectronic devices; carbon contamination; high growth rate; yellow luminescence
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/9/093003