Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

• Published in: Transactions of Nonferrous Metals Society of China Vol. 18; no. 2; pp. 372 - 377
• Main Author: 周灵平 汪明朴 王瑞 李周 朱家俊 彭坤 李德意 李绍禄
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.04.2008; College of Materials Science and Engineering, Hunan University, Changsha 410082, China%School of Materials Science and Engineering, Central South University, Changsha 410083, China%College of Materials Science and Engineering, Hunan University, Changsha 410082, China; School of Materials Science and Engineering, Central South University, Changsha 410083, China
• Subjects: adhesive strength; Cu-W thin film; interface; ion beam; magnetron sputtering; 磁电管; magnetron sputtering; ion beam; interface; Cu-W thin film; adhesive strength
• ISSN: 1003-6326
• DOI: 10.1016/S1003-6326(08)60065-5

Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology. Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied. It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that, the critical load is doubled over than the sample only sputter-cleaned by ion beam. The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed. With the help of mid-energy Ar^＋ ion beam, W atoms can diffuse into the Fe-substrate surface layer; Fe atoms in the substrate surface layer and W atoms interlace with one another; and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed. The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.