Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs
Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of...
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| Published in | IEEE journal of the Electron Devices Society Vol. 7; pp. 869 - 877 |
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| Main Authors | , , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
| ISSN | 2168-6734 2168-6734 |
| DOI | 10.1109/JEDS.2019.2907957 |
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| Abstract | Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly. |
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| AbstractList | Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly. |
| Author | Ju, Gunwu Song, Jin Dong Kim, Hyung-Jun Kim, Seong Kwang Kim, Sanghyeon Geum, Dae-Myeong Alam, M. A. Shin, Sanghoon Han, Jae-Hoon Lee, Subin Kim, Hansung Shim, Jae-Phil |
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| Snippet | Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors,... |
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| SubjectTerms | Bypasses Electric contacts Electrical resistivity Heat Indium gallium arsenide Indium gallium arsenides InGaAs MOSFETs InGaAs-OI Molybdenum monolithic 3D MOSFET MOSFETs Ni-InGaAs Nickel Reliability Self alignment self-heating Semiconductor devices Thermal resistance Thermal stability Transistors |
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| Title | Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs |
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