Highly Stable Self-Aligned Ni-InGaAs and Non-Self-Aligned Mo Contact for Monolithic 3-D Integration of InGaAs MOSFETs

• Published in: IEEE journal of the Electron Devices Society Vol. 7; pp. 869 - 877
• Main Authors: Kim, Sanghyeon, Song, Jin Dong, Alam, M. A., Kim, Hyung-Jun, Kim, Seong Kwang, Shin, Sanghoon, Han, Jae-Hoon, Geum, Dae-Myeong, Shim, Jae-Phil, Lee, Subin, Kim, Hansung, Ju, Gunwu
• Format: Journal Article
• Language: English
• Published: New York IEEE 2019; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bypasses; Electric contacts; Electrical resistivity; Heat; Indium gallium arsenide; Indium gallium arsenides; InGaAs MOSFETs; InGaAs-OI; Molybdenum; monolithic 3D; MOSFET; MOSFETs; Ni-InGaAs; Nickel; Reliability; Self alignment; self-heating; Semiconductor devices; Thermal resistance; Thermal stability; Transistors
• ISSN: 2168-6734; 2168-6734
• DOI: 10.1109/JEDS.2019.2907957

Self-heating has emerged as an important performance/reliability challenge for modern MOSFETs. The challenge is further acerbated for III-V transistors, especially when integrated monolithically in a 3-D platform for applications in ultrafast logic, imagers, etc. A key challenge is the difficulty of heat-dissipation through the ultra-thin channels needed to ensure electrostatic integrity of scaled transistors. In this paper, we demonstrate an innovative use of a heat-dissipating shunt of Ni-InGaAs on InGaAs(111) in the S/D extension region, as well as the use of high-conductivity Mo contact to simultaneously improve electrical and thermal stability and heat dissipation in III-V transistors, such that the peak channel temperature is reduced by as much as 25%-30%. Given the exponential temperature sensitivity of transistor reliability, heat shunts will improve transistor lifetime significantly.