Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

• Published in: Nanoscale advances Vol. 5; no. 5; pp. 1316 - 1322
• Main Authors: Jin, Taewon, Kim, Sanghyeon, Han, Jae-Hoon, Ahn, Dae-Hwan, An, Seong Ui, Noh, Tae Hyeon, Sun, Xinkai, Kim, Cheol Jun, Park, Juhyuk, Kim, Younghyun
• Format: Journal Article
• Language: English
• Published: England RSC 28.02.2023
• Subjects: Chemistry
• ISSN: 2516-0230; 2516-0230
• DOI: 10.1039/d2na00713d

We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO 2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT. We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors by introducing a non-volatile programmable ferroelectric material, HfZrO 2 into the gate stack of the TFT.