APA (7th ed.) Citation

Park, J., Kang, H., Chung, D., Kim, J., Kim, J., Yun, Y., . . . Suh, D. (2015). Dual-gated BN-sandwiched multilayer graphene field-effect transistor fabricated by stamping transfer method and self-aligned contact. Current applied physics, 15(10), 1184-1187. https://doi.org/10.1016/j.cap.2015.07.001

Chicago Style (17th ed.) Citation

Park, Jeongmin, Haeyong Kang, Dongsub Chung, Joonggyu Kim, Jeong-Gyun Kim, Yoojoo Yun, Young Hee Lee, and Dongseok Suh. "Dual-gated BN-sandwiched Multilayer Graphene Field-effect Transistor Fabricated by Stamping Transfer Method and Self-aligned Contact." Current Applied Physics 15, no. 10 (2015): 1184-1187. https://doi.org/10.1016/j.cap.2015.07.001.

MLA (9th ed.) Citation

Park, Jeongmin, et al. "Dual-gated BN-sandwiched Multilayer Graphene Field-effect Transistor Fabricated by Stamping Transfer Method and Self-aligned Contact." Current Applied Physics, vol. 15, no. 10, 2015, pp. 1184-1187, https://doi.org/10.1016/j.cap.2015.07.001.