Dual-gated BN-sandwiched multilayer graphene field-effect transistor fabricated by stamping transfer method and self-aligned contact

• Published in: Current applied physics Vol. 15; no. 10; pp. 1184 - 1187
• Main Authors: Park, Jeongmin, Kang, Haeyong, Chung, Dongsub, Kim, Joonggyu, Kim, Jeong-Gyun, Yun, Yoojoo, Lee, Young Hee, Suh, Dongseok
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.10.2015; 한국물리학회
• Subjects: Graphene field-effect transistor; Self-aligned contact; Stamping transfer method; 물리학; Graphene field-effect transistor; Self-aligned contact; Stamping transfer method
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2015.07.001

To fabricate a BN-sandwiched multilayer graphene field-effect transistor, we developed a self-aligned contact scheme in combination with optimized stamping processes for the stacking of two-dimensional (2D) materials. By using a self-aligned contact method during device fabrication, we can skip the dry-etch process which requires an exact etch-stop at the surface of the graphene layer and is not easy to control. In the structure of a dual-gate transistor, successful device operation at low temperature with and without magnetic fields proves that the self-alignment contact can be an effective tool for reliable device fabrication using 2D materials. •First demonstration of self-aligned contact scheme in the dual-gate (i.e. top and bottom gate electrodes) structure.•Stamping transfer technique without the dry-etch process for electrical contacts even in the hBN sandwiched structure.•Successful operation of dual gate showing the two local resistance maxima.•Observation of preliminary signal for conductance quantization in the low-temperature and the high magnetic field.