Enhanced electro-mechanical coupling of TiN/Ce0.8Gd0.2O1.9 thin film electrostrictor

Gadolium doped ceria, Gd:CeO2 (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (Q), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn1/3Nb2/3)O3. Herein, we show that CGO thin films fabri...

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Bibliographic Details
Published inAPL materials Vol. 7; no. 7; pp. 071104 - 071104-5
Main Authors Santucci, Simone, Zhang, Haiwu, Sanna, Simone, Pryds, Nini, Esposito, Vincenzo
Format Journal Article
LanguageEnglish
Published AIP Publishing LLC 01.07.2019
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ISSN2166-532X
2166-532X
DOI10.1063/1.5091735

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Summary:Gadolium doped ceria, Gd:CeO2 (CGO), have recently been shown to possess an exceptional high electrostriction coefficient (Q), which is at the least three orders of magnitude larger than the best performing lead-based electrostrictors, e.g. Pb(Mn1/3Nb2/3)O3. Herein, we show that CGO thin films fabricated by a pulsed laser deposition method can be directly integrated onto the Si substrate by using TiN films of few nanometers as functional electrodes. The exceptional good coupling between TiN and Ce0.8Gd0.2O1.9 yields a high electrostriction coefficient of Qe = 40 m4 C−2 and a superior electrochemomechanical stability with respect to the metal electrodes.
ISSN:2166-532X
2166-532X
DOI:10.1063/1.5091735