Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers
2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of qua...
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| Published in | Journal of semiconductors Vol. 32; no. 10; pp. 22 - 25 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.10.2011
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/32/10/103002 |
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| Abstract | 2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10~（18） cm~（-3） and the resistivity is 5.295×10~（-3）Ω·cm. |
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| AbstractList | 2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10~（18） cm~（-3） and the resistivity is 5.295×10~（-3）Ω·cm. 2 mu m InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy (MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K. The optimal growth temperature of quantum wells is 440 degree C. The PL peak wavelength of quantum wells at 300 K is 1.98 mu m, and the FWHM is 115 nm. Tellurium-doped GaSb buffer layers were optimized by Hall measurement. The optimal doping concentration is 1.127 x 10 super(18) cm super(-3) and the resistivity is 5.295 x 10 super(-3) Omega times cm. |
| Author | 张宇 王国伟 汤宝 徐应强 徐云 宋国锋 |
| AuthorAffiliation | Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China National Laboratory for Superlattice and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China |
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| CitedBy_id | crossref_primary_10_1080_10584587_2024_2327936 crossref_primary_10_1016_j_materresbull_2017_12_013 crossref_primary_10_1088_1674_4926_39_10_104007 crossref_primary_10_1155_2016_8393502 crossref_primary_10_3389_fphy_2022_1047445 crossref_primary_10_4028_www_scientific_net_KEM_552_389 crossref_primary_10_1088_0256_307X_31_5_054204 crossref_primary_10_7498_aps_63_248102 |
| Cites_doi | 10.1109/LPT.2004.826053 10.1063/1.2890053 10.1109/JQE.2010.2051021 10.1063/1.346245 10.1063/1.350296 10.1063/1.1760216 10.1109/68.769710 10.1088/0268-1242/24/11/115013 10.1016/S0022-0248(01)00778-3 10.1103/PhysRev.117.93 10.1063/1.120922 10.1063/1.2953210 |
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| DocumentTitleAlternate | Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers |
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| Notes | 2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10~（18） cm~（-3） and the resistivity is 5.295×10~（-3）Ω·cm. InGaSb; AlGaAsSb; strained quantum wells; Te doped Zhang Yu~,Wang Guowei~,Tang Bao~,Xu Yingqiang Xu Yun~（1,＋）,and Song Guofeng~1 1 Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2 National Laboratory for Superlattice and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China 11-5781/TN ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | 11 12 13 Belenky G (8) 2009; 24 1 2 3 4 5 6 7 9 Li Z G (10) 2009; 19 |
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| Snippet | 2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of... 2 mu m InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy (MBE). The growth parameters of... |
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| SubjectTerms | Atomic force microscopy Buffer layers Electrical resistivity Molecular beam epitaxy Optimization Quantum wells Semiconductors Wavelengths X射线衍射 分子束外延生长 原子力显微镜 应变量子阱 最佳掺杂浓度 最佳生长温度 激光二极管 生长参数 |
| Title | Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers |
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