Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of qua...

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Published inJournal of semiconductors Vol. 32; no. 10; pp. 22 - 25
Main Author 张宇 王国伟 汤宝 徐应强 徐云 宋国锋
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.10.2011
Subjects
Atomic force microscopy
Buffer layers
Electrical resistivity
Molecular beam epitaxy
Optimization
Quantum wells
Semiconductors
Wavelengths
X射线衍射
分子束外延生长
原子力显微镜
应变量子阱
最佳掺杂浓度
最佳生长温度
激光二极管
生长参数
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ISSN1674-4926
DOI10.1088/1674-4926/32/10/103002

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Summary:2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10~（18） cm~（-3） and the resistivity is 5.295×10~（-3）Ω·cm.
Bibliography:2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy（MBE）.The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at 77 K.The optimal growth temperature of quantum wells is 440℃.The PL peak wavelength of quantum wells at 300 K is 1.98μm,and the FWHM is 115 nm.Tellurium-doped GaSb buffer layers were optimized by Hall measurement.The optimal doping concentration is 1.127×10~（18） cm~（-3） and the resistivity is 5.295×10~（-3）Ω·cm.
InGaSb; AlGaAsSb; strained quantum wells; Te doped
Zhang Yu~,Wang Guowei~,Tang Bao~,Xu Yingqiang Xu Yun~（1,＋）,and Song Guofeng~1 1 Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China 2 National Laboratory for Superlattice and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083,China
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
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ISSN:1674-4926
DOI:10.1088/1674-4926/32/10/103002