张波, 蒋. 陈. 刘. 饶. 董. (2011). Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs. Journal of semiconductors, 32(12), 72-75. https://doi.org/10.1088/1674-4926/32/12/124004
Chicago Style (17th ed.) Citation张波, 蒋华平 陈万军 刘闯 饶祖刚 董彬. "Design and Optimization of Linearly Graded-doping Junction Termination Extension for 3.3-kV-class IGBTs." Journal of Semiconductors 32, no. 12 (2011): 72-75. https://doi.org/10.1088/1674-4926/32/12/124004.
MLA (9th ed.) Citation张波, 蒋华平 陈万军 刘闯 饶祖刚 董彬. "Design and Optimization of Linearly Graded-doping Junction Termination Extension for 3.3-kV-class IGBTs." Journal of Semiconductors, vol. 32, no. 12, 2011, pp. 72-75, https://doi.org/10.1088/1674-4926/32/12/124004.
Warning: These citations may not always be 100% accurate.