Design and optimization of linearly graded-doping junction termination extension for 3.3-kV-class IGBTs

A linearly graded-doping junction termination extension （LG-JTE） for 3.3-kV-class insulated gate bipo- lar transistors （IGBTs） was proposed and experimentally investigated. Unlike conventional multi-implantation uti- lizing more than one photolithography step, a single mask with injection window wid...

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Bibliographic Details
Published inJournal of semiconductors Vol. 32; no. 12; pp. 72 - 75
Main Author 蒋华平 陈万军 刘闯 饶祖刚 董彬 张波
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.12.2011
Subjects
Domestic
Electric potential
IGBT
Insulated gate bipolar transistors
Optimization
Photolithography
Semiconductors
Simulation
Voltage
交界处
优化
兴奋剂
渐变掺杂
线性变化
绝缘栅双极晶体管
设计
Online AccessGet full text
ISSN1674-4926
DOI10.1088/1674-4926/32/12/124004

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Summary:A linearly graded-doping junction termination extension （LG-JTE） for 3.3-kV-class insulated gate bipo- lar transistors （IGBTs） was proposed and experimentally investigated. Unlike conventional multi-implantation uti- lizing more than one photolithography step, a single mask with injection window widths varied linearly away fi＇om the main junction to the edge was implemented in this proposed structure. Based on the simulation results, IGBTs with LG4TE structures were successfully fabricated on the domestic process platform. The fabricated devices exhibited a 3.7 kV forward-blocking voltage, which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3-kV-class 1GBT in a domestic application.
Bibliography:Jiang Huaping, Chen Wanjun, Liu Chuang, Rao Zugang, Dong Bin, and Zhang Bo（1 State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronics Science and Technology of China, Chengdu 610054, China 2Tianjin Zhonghuan Semiconductor Co. Ltd., Tianjin 300384, China）
high voltage IGBT; junction termination extension; IGBT
A linearly graded-doping junction termination extension （LG-JTE） for 3.3-kV-class insulated gate bipo- lar transistors （IGBTs） was proposed and experimentally investigated. Unlike conventional multi-implantation uti- lizing more than one photolithography step, a single mask with injection window widths varied linearly away fi＇om the main junction to the edge was implemented in this proposed structure. Based on the simulation results, IGBTs with LG4TE structures were successfully fabricated on the domestic process platform. The fabricated devices exhibited a 3.7 kV forward-blocking voltage, which is close to the theoretical value of an ideal parallel plane case. This is the first success in fabrication 3.3-kV-class 1GBT in a domestic application.
11-5781/TN
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ISSN:1674-4926
DOI:10.1088/1674-4926/32/12/124004