宋庆文, 黄. 吕. 张. 张. 汤. 陈. (2011). Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode. Chinese physics B, 20(11), 530-533. https://doi.org/10.1088/1674-1056/20/11/118401
Chicago Style (17th ed.) Citation宋庆文, 黄健华 吕红亮 张玉明 张义门 汤晓燕 陈丰平. "Simulation Study of a Mixed Terminal Structure for 4H-SiC Merged PiN/Schottky Diode." Chinese Physics B 20, no. 11 (2011): 530-533. https://doi.org/10.1088/1674-1056/20/11/118401.
MLA (9th ed.) Citation宋庆文, 黄健华 吕红亮 张玉明 张义门 汤晓燕 陈丰平. "Simulation Study of a Mixed Terminal Structure for 4H-SiC Merged PiN/Schottky Diode." Chinese Physics B, vol. 20, no. 11, 2011, pp. 530-533, https://doi.org/10.1088/1674-1056/20/11/118401.
Warning: These citations may not always be 100% accurate.