Simulation study of a mixed terminal structure for 4H-SiC merged PiN/Schottky diode

In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis...

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Published inChinese physics B Vol. 20; no. 11; pp. 530 - 533
Main Author 黄健华 吕红亮 张玉明 张义门 汤晓燕 陈丰平 宋庆文
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2011
Subjects
Breakdown
Constraining
Electric potential
Optimization
PIN
Plates (structural members)
Schottky diodes
SiC
Terminals
Voltage
击穿电压
合并
模拟
混合
终端结构
肖特基二极管
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/11/118401

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Summary:In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.
Bibliography:Huang Jian-Hua,Lu Hong-Liang,Zhang Yu-Ming,Zhang Yi-Men,Tang Xiao-Yan,Chen Feng-Ping,Song Qing-Wen（ School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071, China）
4H-SiC; merged PiN/Schottky diode; junction termination technology;breakdown volt-age
11-5639/O4
In this paper, a mixed terminal structure for the 4H-SiC merged PiN/Schottky diode （MPS） is investigated, which is a combination of a field plate, a junction termination extension and floating limiting rings. Optimization is performed on the terminal structure by using the ISE-TCAD. Further analysis shows that this structure can greatly reduce the sensitivity of the breakdown voltage to the doping concentration and can effectively suppress the effect of the interface charge compared with the structure of the junction termination extension. At the same time, the 4H-SiC MPS with this termination structure can reach a high and stable breakdown voltage.
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/11/118401