Influence of Ga^＋ ion irradiation on the magnetisation reversal process and magnetoresistance in CoFe/Cu/CoFe/IrMn spin valves

Ga^＋ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance （MR） are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with...

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Bibliographic Details
Published inChinese physics B Vol. 19; no. 3; pp. 533 - 538
Main Author 祁先进 王寅岗 缪雪飞 李子全 黄一中
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2010
Subjects
Asymmetry
Bias
Copper
Ion irradiation
Magnetoresistance
Magnetoresistivity
Recoil
Spin valves
交换偏置场
磁电阻
离子辐照
自旋阀
辐照效应
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/19/3/037505

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Summary:Ga^＋ ion irradiation is performed on the surfaces of IrMn-based spin valves and the effects of ion irradiation on the magnetisation reversal process and magnetoresistance （MR） are investigated. The results show that the exchange bias field and magnetoresistance ratio of the spin valve decrease with the increase of ion dose. The width of the forward step between the free layer and the pinned layer becomes gradually smaller with the increase of ion dose whilst the recoil step tends to be narrower with ion dose increasing up to 6×10^13 ions/cm^2 and the step disappears afterwards. Two oeaks in the R-H curve are found to be asymmetric.
Bibliography:TG139.8
O484.43
11-5639/O4
ion irradiation, magnetisation reversal, magnetoresistance, exchange bias
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/3/037505