Band structure and absorption coefficient in GaN/AlGaN quantum wires

The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment...

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Bibliographic Details
Published inChinese physics B Vol. 19; no. 7; pp. 479 - 483
Main Author 姚文杰 俞重远 刘玉敏
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.07.2010
Subjects
Absorption coefficient
Aluminum gallium nitrides
Band structure of solids
Gain
Gallium nitrides
Mathematical models
Photons
Quantum wires
吸收系数
密度矩阵方法
有效质量理论
氮化铝
氮化镓
能带结构
量子线
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/19/7/077101

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Summary:The band structures of rectangular GaN/AlGaN quantum wires are modeled by using a parabolic effective-mass theory. The absorption coefficients are calculated in a contact-density matrix approach based on the band structure. The results obtained indicate that the peak absorption coefficients augment with the increase of the injected carrier density, and the optical gain caused by interband transition is polarization anisotropic. For the photon energy near 1.55 eV, we can obtain relatively large peak gain. The calculations support the previous results published in the recent literature.
Bibliography:O471.5
absorption coefficient, gain, polarization anisotropic, quantum wires
11-5639/O4
O484.41
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/19/7/077101