Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices
The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as...
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| Published in | Journal of semiconductors Vol. 36; no. 11; pp. 30 - 33 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
Chinese Institute of Electronics
01.11.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/36/11/114002 |
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| Abstract | The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention. |
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| AbstractList | The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention. |
| Author | 陈叶华 安霞 武唯康 张曜 刘静静 张兴 黄如 |
| AuthorAffiliation | Peking University Shenzhen Graduate School, Shenzhen 518055, China Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University,Beijing 100871, China School of Software and Microelectronics, Peking University, Wuxi 214125, China |
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| Cites_doi | 10.1109/23.556887 10.1109/TNS.2013.2261316 10.1109/23.490899 10.1109/TNS.1987.4337442 10.1109/TDMR.2005.853449 10.1109/TNS.2009.2033689 10.1109/TNS.2003.813197 10.1109/TNS.2003.813129 10.1109/TNS.2006.884788 10.1103/PhysRevB.54.16683 |
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| Copyright | 2015 Chinese Institute of Electronics |
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| DOI | 10.1088/1674-4926/36/11/114002 |
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| DocumentTitleAlternate | Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices |
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| Notes | The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention. 11-5781/TN Chen Yehua,An Xia,Wu Weikang,Zhang Yao,Liu Jingjing,Zhang Xing,Huang Ru （1. Peking University Shenzhen Graduate School, Shenzhen 518055, China; 2.Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China; 3. School of Software and Microelectronics, Peking University, Wuxi 214125, China） heavy ion; displacement damage; bulk silicon ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
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| References | 11 12 Dodd P E (1) 1999 3 4 Baumann R (2) 2005 5 6 7 8 9 10 |
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| Snippet | The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident... |
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| SubjectTerms | bulk silicon Damage Degradation displacement damage Drains heavy ion Ion irradiation MOS devices MOS器件 Semiconductors Silicon Strikes 体硅 性能退化 电学 辐射诱导 辐照实验 重离子辐照 阈值电压漂移 |
| Title | Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices |
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