Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices

The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as...

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Published inJournal of semiconductors Vol. 36; no. 11; pp. 30 - 33
Main Author 陈叶华 安霞 武唯康 张曜 刘静静 张兴 黄如
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.11.2015
Subjects
bulk silicon
Damage
Degradation
displacement damage
Drains
heavy ion
Ion irradiation
MOS devices
MOS器件
Semiconductors
Silicon
Strikes
体硅
性能退化
电学
辐射诱导
辐照实验
重离子辐照
阈值电压漂移
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ISSN1674-4926
DOI10.1088/1674-4926/36/11/114002

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Summary:The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.
Bibliography:The radiation response of 90 nm bulk silicon MOS devices after heavy ion irradiation is experimentally investigated. Due to the random strike of the incident particle, different degradation behaviors of bulk silicon MOS devices are observed. The drain current and maximum transconductance degrade as a result of the displacement damage in the channel induced by heavy ion strike. The off-state leakage current degradation and threshold voltage shift are also observed after heavy ion irradiation. The results suggest that the radiation induced damage of sub-100 nm MOS devices caused by heavy ion irradiation should be paid attention.
11-5781/TN
Chen Yehua,An Xia,Wu Weikang,Zhang Yao,Liu Jingjing,Zhang Xing,Huang Ru （1. Peking University Shenzhen Graduate School, Shenzhen 518055, China; 2.Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing 100871, China; 3. School of Software and Microelectronics, Peking University, Wuxi 214125, China）
heavy ion; displacement damage; bulk silicon
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ISSN:1674-4926
DOI:10.1088/1674-4926/36/11/114002