黄如, 陈. 安. 武. 张. 刘. 张. (2015). Heavy ion induced electrical property degradation in sub-100 nm bulk silicon MOS devices. Journal of semiconductors, 36(11), 30-33. https://doi.org/10.1088/1674-4926/36/11/114002
Chicago Style (17th ed.) Citation黄如, 陈叶华 安霞 武唯康 张曜 刘静静 张兴. "Heavy Ion Induced Electrical Property Degradation in Sub-100 Nm Bulk Silicon MOS Devices." Journal of Semiconductors 36, no. 11 (2015): 30-33. https://doi.org/10.1088/1674-4926/36/11/114002.
MLA (9th ed.) Citation黄如, 陈叶华 安霞 武唯康 张曜 刘静静 张兴. "Heavy Ion Induced Electrical Property Degradation in Sub-100 Nm Bulk Silicon MOS Devices." Journal of Semiconductors, vol. 36, no. 11, 2015, pp. 30-33, https://doi.org/10.1088/1674-4926/36/11/114002.
Warning: These citations may not always be 100% accurate.