Modeling and simulation of single-event effect in CMOS circuit

This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical...

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Published inJournal of semiconductors Vol. 36; no. 11; pp. 15 - 24
Main Author 岳素格 张晓林 赵元富 刘琳 王汉宁
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.11.2015
Subjects
Charge
charge collection
CMOS电路
Computer simulation
Devices
Ionization
Modelling
multi-node upset (MNU)
Production methods
Semiconductors
single event effect (SEE)
single event upset (SEU)
Soft errors
仿真建模
半导体器件
单粒子效应
双极晶体管
模拟方法
电离辐射
集成电路
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ISSN1674-4926
DOI10.1088/1674-4926/36/11/111002

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Summary:This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.
Bibliography:This paper reviews the status of research in modeling and simulation of single-event effects（SEE） in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device（direct ionization and indirect ionization） are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices（bipolar transistor effect, charge sharing effect） and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients（SETs） in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed.
Yue Suge,Zhang Xiaolin,Zhao Yuanfu,Liu Lin,Wang Hanning（ 1.Beijing University of Aeronautics ＆ Astronautics, Beijing 100191, China; 2.Beijing Microelectronics Technology Institute, Beijing 100076, China）
single event effect（SEE）; charge collection; single event upset（SEU）; multi-node upset（MNU）
11-5781/TN
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/36/11/111002