Influence of substrate temperature on the performance of zinc oxide thin film transistor

• Published in: Journal of semiconductors Vol. 32; no. 4; pp. 57 - 61
• Main Author: 马军伟 冉峰 徐美华 计慧杰
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2011
• Subjects: Deposition; Devices; Gates; Radio frequencies; Semiconductor devices; Semiconductors; Thin film transistors; Zinc oxide; 原子力显微镜; 场效应迁移率; 无线电频率; 晶体性能; 氧化锌薄膜; 薄膜晶体管; 薄膜沉积; 衬底温度
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/32/4/044002

Top-contact thin film transistors（TFTs） using radio frequency（RP） magnetron sputtering zinc oxide （ZnO） and silicon dioxide（SiO2） films as the active channel layer and gate insulator layer,respectively,were fabricated.The performances of ZnO TFTs with different ZnO film deposition temperatures（room temperature, 100℃and 200℃） were investigated.Compared with the transistor with room-temperature deposited ZnO films, the mobility of the device fabricated at 200℃is improved by 94%and the threshold voltage shift is reduced from 18 to 3 V（after 1 h positive gate voltage stress）.Experimental results indicate that substrate temperature plays an important role in enhancing the field effect mobility,sharping the subthreshold swing and improving the bias stability of the devices.Atomic force microscopy was used to investigate the ZnO film properties.The reasons for the device performance improvement are discussed.