Characteristics of high power LEDs at high and low temperature

• Published in: Journal of semiconductors Vol. 32; no. 4; pp. 83 - 85
• Main Author: 郭伟玲 贾学娇 尹飞 崔碧峰 高伟 刘莹 闫薇薇
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2011
• Subjects: Electric potential; Indium gallium nitrides; Light-emitting diodes; On-line systems; Semiconductors; Spectral emittance; Voltage; Wavelengths; 峰值波长; 性能变化; 氮化铟镓; 波长蓝移; 测量温度; 特性; 高低温; 高功率LED
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/32/4/044007

The high power light emitting diodes（LEDs） based on InGaN and AlGaInP individually are tested on line at temperatures from -30 to 100℃.The data are fitted to measure the relationship between temperature and the properties of forward voltage,relative light intensity,wavelength,and spectral bandwidth of two different kinds of LEDs.Why these properties changed and how these changes reflected on applications are also analyzed and compared with each other.The results show that temperature has a great influence on the performance and application of power LEDs.For applications at low temperature,the forward voltage rising and the peak wavelength blue-shifting must be considered;and at high temperature,the relative light intensity decreasing and the peak wavelength red-shifting must be considered.