Thermal stability of tungsten and tungsten nitride Schottky contacts to AlGaN/GaN

Thin tungsten nitride （WNx） films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-volta...

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Published inChinese physics B Vol. 20; no. 6; pp. 403 - 406
Main Author 刘芳 秦志新 许福军 赵胜 康香宁 沈波 张国义
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2011
Subjects
AlGaN
Aluminum gallium nitrides
Annealing
Gallium nitrides
Leakage current
Nitrides
Thermal stability
Transport
Tungsten
氮化物
热稳定性
直流磁控溅射
肖特基二极管
肖特基接触
钨
高斯分布模型
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/20/6/067303

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Summary:Thin tungsten nitride （WNx） films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage （I-V） measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts, Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. ATE model with a Gaussian distribution of Schottky barrier heights （SBHs） is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.
Bibliography:Thin tungsten nitride （WNx） films were produced by reactive DC magnetron sputtering of tungsten in an Ar-N2 gas mixture. The films were used as Schottky contacts on AlGaN/GaN heterostructures. The Schottky behaviours of WNx contact was investigated under various annealing conditions by current-voltage （I-V） measurements. The results show that the gate leakage current was reduced to 10-6 A/cm2 when the N2 flow is 400 mL/min. The results also show that the WNx contact improved the thermal stability of Schottky contacts, Finally, the current transport mechanism in WNx/AlGaN/GaN Schottky diodes has been investigated by means of I-V characterisation technique at various temperatures between 300 K and 523 K. ATE model with a Gaussian distribution of Schottky barrier heights （SBHs） is thought to be responsible for the electrical behaviour at temperatures lower than 523 K.
AlGaN/GaN heterostructures, tungsten nitride, Schottky contacts
Liu Fang, Qin Zhi-Xin, Xu Fu-Jun, Zhao Sheng, Kang Xiang-Ning, Shen Bo, and Zhang Guo-Yi（State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China）
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
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ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/20/6/067303