Interference Signal Effects on a High-Frequency Monolithic Voltage-Controlled Oscillator: Experiments and Simulations

• Published in: IEEE transactions on electromagnetic compatibility Vol. 56; no. 1; pp. 51 - 59
• Main Authors: Raoult, Jeremy, Blain, Amable, Doridant, Adrien, Jarrix, Sylvie
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2014; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Circuit properties; Circuits; Communication, education, history, and philosophy; Demonstration experiments and apparatus; Educational aids; Electric, optical and optoelectronic circuits; Electrical engineering. Electrical power engineering; Electrical machines; Electromagnetic compatibility; Electromagnetic interference; Electromagnetic susceptibility; Electronic circuits; Electronics; Engineering Sciences; envelope-transient technique; Exact sciences and technology; Frequency bands; Frequency modulation; injection pulling; Injection-locked oscillators; injection-locking; Interference; Laboratory experiments and apparatus; Oscillators, resonators, synthetizers; Physics; Q-factor; Regulation and control; Silicon germanides; Simulation; simulation process; Voltage control; Voltage controlled oscillators; voltage-controlled oscillator; Ge-Si alloys; Oscillation frequency; Electromagnetic compatibility; Frequency control; Implementation; Electromagnetic susceptibility; Electromagnetic disturbance; BiCMOS technology; injection-locking; Frequency band; Electromagnetic interference; envelope-transient technique; simulation process; Active circuit; Solid state oscillator; Semiconductor alloys; Range finding; injection pulling; Voltage controlled oscillator; Injection locking; Experimental study; Transient method; Signal interference; High voltage; System simulation; High frequency; voltage-controlled oscillator
• ISSN: 0018-9375; 1558-187X
• DOI: 10.1109/TEMC.2013.2271792

This paper reflects a part of electromagnetic susceptibility studies conducted on active circuits. An electromagnetic interference (EMI) is injected on a 5 GHz monolithic voltage-controlled oscillator (VCO). This circuit is implemented on a 0.35 μm BiCMOS SiGe process. Injection locking and pulling are put in evidence when the circuit is subject to a high frequency interference with possible frequency band widened with respect to the oscillation frequency band of the VCO. A simulation process based on envelope-transient method is presented. Its main goal is to predict the behavior of the VCO under injection with interference signal power ranging from low to high level.