Characterization of a room temperature terahertz detector based on a GaN/AlGaN HEMT

We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel.A photocurrent...

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Published inJournal of semiconductors Vol. 32; no. 6; pp. 40 - 43
Main Author 周宇 孙建东 孙云飞 张志鹏 林文魁 刘宏欣 曾春红 陆敏 蔡勇 吴东岷 楼柿涛 秦华 张宝顺
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.06.2011
Subjects
Aluminum gallium nitrides
Channels
Detectors
Gallium nitrides
HEMT
High electron mobility transistors
Horizontal
Semiconductor devices
Semiconductors
太赫兹
室温
探测器
氮化铝
氮化镓
表征
高电子迁移率
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ISSN1674-4926
DOI10.1088/1674-4926/32/6/064005

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Summary:We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel.A photocurrent is generated when the electron channel is strongly modulated by the gate voltage.Despite the large channel length and gate-source/drain distance, significant horizontal and perpendicular fields are achieved.The device is well described by the self-mixing of terahertz fields in the electron channel.The noise-equivalent power and responsivity are estimated to be 100 nW/（Hz）~（1/2） and 3 mA/ W at 292 K,respectively.No decrease in responsivity is observed up to a modulation frequency of 5 kHz. The detector performance can be further improved by engineering the source-gate-drain geometry to enhance the nonlinearity.
Bibliography:terahertz detector; high electron mobility transistor; mixing; two-dimensional electron gas
We report on the characterization of a room temperature terahertz detector based on a GaN/AlGaN high electron mobility transistor integrated with three patch antennas.Experimental results prove that both horizontal and perpendicular electric fields are induced in the electron channel.A photocurrent is generated when the electron channel is strongly modulated by the gate voltage.Despite the large channel length and gate-source/drain distance, significant horizontal and perpendicular fields are achieved.The device is well described by the self-mixing of terahertz fields in the electron channel.The noise-equivalent power and responsivity are estimated to be 100 nW/（Hz）~（1/2） and 3 mA/ W at 292 K,respectively.No decrease in responsivity is observed up to a modulation frequency of 5 kHz. The detector performance can be further improved by engineering the source-gate-drain geometry to enhance the nonlinearity.
11-5781/TN
Zhou Yu,Sun Jiandong,Sun Yunfei,Zhang Zhipeng Lin Wenkui,Liu Hongxin,Zeng Chunhong,Lu Min Cai Yong,Wu Dongmin,Lou Shitao,Qin Hua , Zhang Baoshun Key Laboratory of Nanodevices,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences, Suzhou 215123,China
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ISSN:1674-4926
DOI:10.1088/1674-4926/32/6/064005