System on chip thermal vacuum sensor based on standard CMOS process
An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A...
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| Published in | Journal of semiconductors Vol. 30; no. 3; pp. 104 - 108 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
IOP Publishing
01.03.2009
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| Subjects | |
| Online Access | Get full text |
| ISSN | 1674-4926 |
| DOI | 10.1088/1674-4926/30/3/035004 |
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| Abstract | An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A tungsten resistor was manufactured on the MHP as the sensing element, and the sacrificial layer of the sensor was made from polysilicon and etched by surface-micromachining technology. The operational amplifier was configured to make the sensor operate in constant current mode. A digital bit stream was provided as the system output. The measurement results demonstrate that the gas pressure sensitive range of the vacuum sensor extends from 1 to 105 Pa. In the gas pressure range from 1 to 100 Pa, the sensitivity of the sensor is 0.23 mV/Pa, the linearity is 4.95%, and the hysteresis is 8.69%. The operational amplifier can drive 200 Ω resistors distortionlessly, and the SAR A/D converter achieves a resolution of 7.4 bit with 100 kHz sample rate. The performance of the operational amplifier and the SAR A/D converter meets the requirements of the sensor system. |
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| AbstractList | An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A tungsten resistor was manufactured on the MHP as the sensing element, and the sacrificial layer of the sensor was made from polysilicon and etched by surface-micromachining technology. The operational amplifier was configured to make the sensor operate in constant current mode. A digital bit stream was provided as the system output. The measurement results demonstrate that the gas pressure sensitive range of the vacuum sensor extends from 1 to 105 Pa. In the gas pressure range from 1 to 100 Pa, the sensitivity of the sensor is 0.23 mV/Pa, the linearity is 4.95%, and the hysteresis is 8.69%. The operational amplifier can drive 200 Ω resistors distortionlessly, and the SAR A/D converter achieves a resolution of 7.4 bit with 100 kHz sample rate. The performance of the operational amplifier and the SAR A/D converter meets the requirements of the sensor system. An on-chip microelectromechanical system was fabricated in a 0.5 mum standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A tungsten resistor was manufactured on the MHP as the sensing element, and the sacrificial layer of the sensor was made from polysilicon and etched by surface-micromachining technology. The operational amplifier was configured to make the sensor operate in constant current mode. A digital bit stream was provided as the system output. The measurement results demonstrate that the gas pressure sensitive range of the vacuum sensor extends from 1 to 105 Pa. In the gas pressure range from 1 to 100 Pa, the sensitivity of the sensor is 0.23 mV/ Pa, the linearity is 4.95%, and the hysteresis is 8.69%. The operational amplifier can drive 200 omega resistors distortionlessly, and the SAR A/D converter achieves a resolution of 7.4 bit with 100 kHz sample rate. The performance of the operational amplifier and the SAR A/D converter meets the requirements of the sensor system. |
| Author | 李金凤 唐祯安 汪家奇 |
| AuthorAffiliation | Department of Electronic Engineering, Dalian University of Technology, Dalian 116024, China College of Information Engineering, Shenyang Institute of Chemical Technology, Shenyang 110142, China |
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| Cites_doi | 10.1049/el:20001247 10.1007/s005420000050 10.1023/A:1022557817503 10.1109/4.743758 10.1109/16.974763 10.1016/S0924-4247(97)80222-1 10.1109/JSSC.2003.813296 10.1109/ISCAS.2007.378860 |
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| DocumentTitleAlternate | System on chip thermal vacuum sensor based on standard CMOS process |
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| Notes | micro-hotplate monolithic micro-hotplate; thermal vacuum sensor; monolithic; operational amplifier; SAR ADC TP212 SAR ADC thermal vacuum sensor U464.17 operational amplifier 11-5781/TN ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References | 11 Zhang Fengtian (3) 2008; 29 Bjorsell N (13) 2005 Hung Y C (10) 2002 (12) 2000 1 2 Haberli A (4) 1996 5 6 7 8 9 |
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| Snippet | An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate... An on-chip microelectromechanical system was fabricated in a 0.5 mum standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate... |
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| SubjectTerms | CMOS工艺 工艺气体 微机械加工技术 微机电系统 标准 片上系统 真空传感器 运算放大器 |
| Title | System on chip thermal vacuum sensor based on standard CMOS process |
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