System on chip thermal vacuum sensor based on standard CMOS process

An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A...

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Bibliographic Details
Published inJournal of semiconductors Vol. 30; no. 3; pp. 104 - 108
Main Author 李金凤 唐祯安 汪家奇
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2009
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ISSN1674-4926
DOI10.1088/1674-4926/30/3/035004

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Summary:An on-chip microelectromechanical system was fabricated in a 0.5μm standard CMOS process for gas pressure detection. The sensor was based on a micro-hotplate (MHP) and had been integrated with a rail to rail operational amplifier and an 8-bit successive approximation register (SAR) A/D converter. A tungsten resistor was manufactured on the MHP as the sensing element, and the sacrificial layer of the sensor was made from polysilicon and etched by surface-micromachining technology. The operational amplifier was configured to make the sensor operate in constant current mode. A digital bit stream was provided as the system output. The measurement results demonstrate that the gas pressure sensitive range of the vacuum sensor extends from 1 to 105 Pa. In the gas pressure range from 1 to 100 Pa, the sensitivity of the sensor is 0.23 mV/Pa, the linearity is 4.95%, and the hysteresis is 8.69%. The operational amplifier can drive 200 Ω resistors distortionlessly, and the SAR A/D converter achieves a resolution of 7.4 bit with 100 kHz sample rate. The performance of the operational amplifier and the SAR A/D converter meets the requirements of the sensor system.
Bibliography:micro-hotplate
monolithic
micro-hotplate; thermal vacuum sensor; monolithic; operational amplifier; SAR ADC
TP212
SAR ADC
thermal vacuum sensor
U464.17
operational amplifier
11-5781/TN
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1674-4926
DOI:10.1088/1674-4926/30/3/035004