Design and fabrication of 1.55μm broad area slotted single-mode Fabry–Perot lasers

We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The pa...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 3; pp. 67 - 70
Main Author 李梦珂 袁丽君 于红艳 阚强 李士颜 米俊萍 潘教青
Format Journal Article
LanguageEnglish
Published Chinese Institute of Electronics 01.03.2016
Subjects
1.55 μm
CAMFR
Computer simulation
Etching
Filled plastics
Lasers
Mathematical models
Modelling
perturbing slots
Semiconductors
single mode laser
制作
单模激光
开槽
最大输出功率
激光器
电感耦合等离子体
设计
面积
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ISSN1674-4926
DOI10.1088/1674-4926/37/3/034007

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Summary:We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The parameters were designed using the simulation tool ＂cavity modeling framework＂（CAMFR）. The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuouswave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.
Bibliography:We present a single-mode laser on a p-In P substrate suitable for bonding on silicon-on-insulator（SOI）wafer. The laser can realize single mode lasing with etching perturbing slots by standard photolithography and an inductively coupled-plasma（ICP） etching technique without any regrowth steps. The parameters were designed using the simulation tool ＂cavity modeling framework＂（CAMFR）. The single mode of 1539 nm wavelength at the threshold current of 130 mA with the maximum output power of 3.9 mW was obtained at 10℃ in continuouswave operation. The simple technology, low cost and the single-mode characteristics make the broad area slotted single-mode FP laser a promising light source on the silicon-based optical interconnection applications.
11-5781/TN
single mode laser 1.55μm CAMFR perturbing slots
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ISSN:1674-4926
DOI:10.1088/1674-4926/37/3/034007