Photocarrier radiometry for noncontact evaluation of space monocrystalline silicon solar cell under low-energy electron irradiation

• Published in: Chinese physics B Vol. 24; no. 9; pp. 536 - 541
• Main Author: 刘俊岩 宋鹏 王飞 王扬
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.09.2015
• Subjects: Carrier lifetime; Computer simulation; Electron energy; Electron irradiation; Low energy; PCR分析; photocarrier radiometry; Photovoltaic cells; Radiometry; silicon solar cell; Solar cells; 低能量; 单晶硅太阳能电池; 电子辐照; 空间; 表面复合速度; 评估; 载流子寿命
• ISSN: 1674-1056; 2058-3834; 1741-4199
• DOI: 10.1088/1674-1056/24/9/097801

A space monocrystalline silicon（c-Si） solar cell under low-energy（〈 1 MeV） electron irradiation was investigated using noncontact photocarrier radiometry（PCR）. Monte Carlo simulation（MCS） was employed to characterize the effect of different energy electron irradiation on the c-Si solar cell. The carrier transport parameters（carrier lifetime, diffusion coefficient, and surface recombination velocities） were obtained by best fitting the experimental results with a theoretical one-dimensional two-layer PCR model. The results showed that the increase of the irradiation electron energy caused a large reduction of the carrier lifetime and diffusion length. Furthermore, the rear surface recombination velocity of the Si：p base of the solar cell at the irradiation electron energy of 1 Me V was dramatically enhanced due to 1 MeV electron passing through the whole cell. Short-circuit current（I sc） degradation evaluated by PCR was in good agreement with that obtained by electrical measurement.