Preparation of La2NiMnO6 thin films on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition

• Published in: Journal of materials science. Materials in electronics Vol. 22; no. 2; pp. 116 - 119
• Main Authors: Tian, Yi Liang, Zhang, Wei, Li, Lei, Lin, Yi Qi, Chen, Xiang Ming
• Format: Journal Article
• Language: English
• Published: Boston Springer US 01.02.2011; Springer
• Subjects: Applied sciences; Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystallization; Electronics; Exact sciences and technology; Growth from solid phases (including multiphase diffusion and recrystallization); Laser deposition; Materials Science; Methods of crystal growth; physics of crystal growth; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Morphology; Optical and Electronic Materials; Physics; Platinum; Pulsed laser deposition; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon dioxide; Silicon substrates; Structure of solids and liquids; crystallography; Structure of specific crystalline solids; Thin films; Titanium dioxide; Crystallization Behavior; Fine Morphology; Pulse Laser Deposition; Deposition Temperature; Oxygen Pressure; Thin films; Microelectronic fabrication; Oxygen; Silicon oxides; Crystallization; Pulsed laser deposition; Perovskites; Microstructure; Titanium oxide; IV-VI compound; Crystal structure
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-010-0097-8

Double perovskite La 2 NiMnO 6 thin films were prepared on Pt/TiO 2 /SiO 2 /Si substrates by the pulsed laser deposition process, and the crystal structure and microstructures were investigated. The temperature and the oxygen pressure played the primary roles dominating the crystallization behavior and the morphology of La 2 NiMnO 6 thin films. The well crystallized La 2 NiMnO 6 thin films could be obtained at 873 and 923 K under all oxygen pressures investigated here, and the fine morphology was obtained under the oxygen pressures equal to or higher than 50 and 100 Pa, respectively, while phase constitution was significantly affected by the oxygen pressure for La 2 NiMnO 6 thin films prepared at 1,023 K where the higher oxygen pressure led to the appearance of some secondary phase.