Radio-frequency transistors from millimeter-scale graphene domains

Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF fie...

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Bibliographic Details
Published inChinese physics B Vol. 23; no. 11; pp. 470 - 475
Main Author 魏子钧 傅云义 刘竞博 王紫东 贾越辉 郭剑 任黎明 陈远富 张酣 黄如 张兴
Format Journal Article
LanguageEnglish
Published 01.11.2014
Subjects
Circuits
Density
Electronics
Graphene
Oscillations
RF晶体管
Semiconductor devices
Silicon substrates
Threshold currents
Transistors
场效应晶体管
射频晶体管
截止频率
毫米级
电子应用
石墨
阈值电流密度
Online AccessGet full text
ISSN1674-1056
2058-3834
1741-4199
DOI10.1088/1674-1056/23/11/117201

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Summary:Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.
Bibliography:Graphene is a new promising candidate for application in radio-frequency （RF） electronics due to its excellent elec- tronic properties such as ultrahigh carrier mobility, large threshold current density, and high saturation velocity. Recently, much progress has been made in the graphene-based RF field-effect transistors （RF-FETs）. Here we present for the first time the high-performance top-gated RF transistors using millimeter-scale single graphene domain on a SiO2/Si substrate through a conventional microfabrication process. A maximum cut-off frequency of 178 GHz and a peak maximum os- cillation frequency of 35 GHz are achieved in the graphene-domain-based FET with a gate length of 50 nm and 150 nm, respectively. This work shows that the millimeter-scale single graphene domain has great potential applications in RF devices and circuits.
Wei Zi-Jun, Fu Yun-Yi, Liu Jing-Bo, Wang Zi-Dong, Jia Yue-Hui, Guo Jian, Ren Li-Ming, Chen Yuan-Fu, Zhang Han, Huang Ru and Zhang Xing（ a） Institute of Microelectronics, Peking University, Beijing 100871, China b） State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China C ） School of Physics, Peking University, Beijing 100871, China
millimeter-scale graphene domain, radio-frequency transistor, cut-off frequency, maximum oscil-lation frequency
11-5639/O4
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/23/11/117201