APA (7th ed.) Citation

Martin, P., Cavelier, M., Fascio, R., Ghibaudo, G., & Bucher, M. (2009). EKV3 compact modeling of MOS transistors from a 0.18 μm CMOS technology for mixed analog–digital circuit design at low temperature. Cryogenics (Guildford), 49(11), 595-598. https://doi.org/10.1016/j.cryogenics.2008.12.005

Chicago Style (17th ed.) Citation

Martin, P., M. Cavelier, R. Fascio, G. Ghibaudo, and M. Bucher. "EKV3 Compact Modeling of MOS Transistors from a 0.18 μm CMOS Technology for Mixed Analog–digital Circuit Design at Low Temperature." Cryogenics (Guildford) 49, no. 11 (2009): 595-598. https://doi.org/10.1016/j.cryogenics.2008.12.005.

MLA (9th ed.) Citation

Martin, P., et al. "EKV3 Compact Modeling of MOS Transistors from a 0.18 μm CMOS Technology for Mixed Analog–digital Circuit Design at Low Temperature." Cryogenics (Guildford), vol. 49, no. 11, 2009, pp. 595-598, https://doi.org/10.1016/j.cryogenics.2008.12.005.