Properties study of ZnO:Ga crystal on pulsed radiation detections

In this paper, properties on pulsed radiation detections of ZnO:Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser, pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response...

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Published inChinese physics C Vol. 34; no. 3; pp. 354 - 358
Main Author 马彦良 欧阳晓平 张景文 张忠兵 潘洪波 陈亮 刘林月
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.03.2010
Northwest Institute of Nuclear Technology,Xi'an 710024,China%Xi'an Jiaotong University,Xi'an 710049,China
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ISSN1674-1137
0254-3052
2058-6132
DOI10.1088/1674-1137/34/3/009

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Summary:In this paper, properties on pulsed radiation detections of ZnO:Ga crystal grew by a magnetron sputtering method were studied. The time response to pulsed laser, pulsed hard X rays and single α particles, the energy response to pulsed hard X ray, the scintillation efficiency to γ rays, the response to pulsed proton, and the relations of the light intensity varied with the proton energy were measured and analyzed in detail. Results show that the ZnO:Ga crystal has potential applications in the regime of pulse radiation detection.
Bibliography:O734.1
11-5641/O4
P145.6
ZnO:Ga, inorganic scintillator, radiation detection, time response, energy response, luminescence efficiency
ISSN:1674-1137
0254-3052
2058-6132
DOI:10.1088/1674-1137/34/3/009