LET Dependence of Single Event Transient Pulse-Widths in SOI Logic Cell

Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.

Saved in:

Bibliographic Details
Published in	IEEE transactions on nuclear science Vol. 56; no. 1; pp. 202 - 207
Main Authors	Makino, T., Kobayashi, D., Hirose, K., Yanagawa, Y., Saito, H., Ikeda, H., Takahashi, D., Ishii, S., Kusano, M., Onoda, S., Hirao, T., Ohshima, T.
Format	Journal Article
Language	English
Published	New York IEEE 01.02.2009 The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects	Capture (nuclear) Carrier recombination Circuit simulation Circuit testing Circuits Devices Energy exchange Energy transfer Extraterrestrial measurements Logic Logic cell Pulse circuits Pulse inverters Pulse measurements Pulse width modulation inverters Simulation single event transient SOI Space vector pulse width modulation
Online Access	Get full text
ISSN	0018-9499 1558-1578
DOI	10.1109/TNS.2008.2009054

Cover

More Information
Summary:	Single event transient (SET) pulse-widths were measured as a function of linear energy transfer (LET) by using pulse capture circuits and simulated with mixed-mode 3-D device simulations. We found that the carrier recombination process dominates the LET dependence of the pulse-widths.
Bibliography:	ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 ObjectType-Article-2 ObjectType-Feature-1 content type line 23
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2008.2009054