Jang, J., & Choi, W. (2011). Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs). Journal of semiconductor technology and science, 11(4), 272-277. https://doi.org/10.5573/jsts.2011.11.4.272
Chicago Style (17th ed.) CitationJang, Jung-Shik, and Woo-Young Choi. "Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)." Journal of Semiconductor Technology and Science 11, no. 4 (2011): 272-277. https://doi.org/10.5573/jsts.2011.11.4.272.
MLA (9th ed.) CitationJang, Jung-Shik, and Woo-Young Choi. "Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)." Journal of Semiconductor Technology and Science, vol. 11, no. 4, 2011, pp. 272-277, https://doi.org/10.5573/jsts.2011.11.4.272.
Warning: These citations may not always be 100% accurate.