Ambipolarity Factor of Tunneling Field-Effect Transistors (TFETs)

The ambipolar behavior of tunneling fieldeffect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter:ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the effect...

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Bibliographic Details
Published inJournal of semiconductor technology and science Vol. 11; no. 4; pp. 272 - 277
Main Authors Jang, Jung-Shik, Choi, Woo-Young
Format Journal Article
LanguageEnglish
Published 대한전자공학회 31.12.2011
Subjects
전기공학
low voltage
Ambipolarity factor (ν)
tunneling field-effect transistor
transistor parameter
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ISSN1598-1657
2233-4866
DOI10.5573/jsts.2011.11.4.272

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Summary:The ambipolar behavior of tunneling fieldeffect transistors (TFETs) has been investigated quantitatively by introducing a novel parameter:ambipolarity factor (ν). It has been found that the malfunction of TFET can result from the ambipolar state which is not on- or off- state. Therefore, the effect of ambipolar behavior on the device performance should be parameterized quantitatively,and this has been successfully evaluated as a function of device structure, gate oxide thickness, supply voltage, drain doping concentration and body doping concentration by using ν. KCI Citation Count: 39
Bibliography:G704-002163.2011.11.4.009
ISSN:1598-1657
2233-4866
DOI:10.5573/jsts.2011.11.4.272