Tunnel Field-Effect Transistors: Prospects and Challenges
The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (V DD ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are revi...
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| Published in | IEEE journal of the Electron Devices Society Vol. 3; no. 3; pp. 88 - 95 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.05.2015
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| Subjects | |
| Online Access | Get full text |
| ISSN | 2168-6734 2168-6734 |
| DOI | 10.1109/JEDS.2015.2390591 |
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| Abstract | The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (V DD ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFETs prospects at L G = 13 nm node together with the main challenges and benefits of its implementation. Significant power savings at iso-performance to CMOS are shown for GaSb/InAs TFET, but only for performance targets which use lower than conventional V DD . Also, P-TFET current-drive is between 1× to 0.5× of N-TFET, depending on choice of I OFF and V DD . There are many challenges to realizing TFETs in products, such as the requirement of high quality III-V materials and oxides with very thin body dimensions, and the TFET's layout density and reliability issues due to its source/drain asymmetry. Yet, extremely parallelizable products, such as graphics cores, show the prospect of longer battery life at a cost of some chip area. |
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| AbstractList | The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (VDD). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFETs prospects at LG = 13 nm node together with the main challenges and benefits of its implementation. Significant power savings at iso-performance to CMOS are shown for GaSb/InAs TFET, but only for performance targets which use lower than conventional VDD. Also, P-TFET current-drive is between 1× to 0.5× of N-TFET, depending on choice of IOFF and VDD. There are many challenges to realizing TFETs in products, such as the requirement of high quality III-V materials and oxides with very thin body dimensions, and the TFET's layout density and reliability issues due to its source/drain asymmetry. Yet, extremely parallelizable products, such as graphics cores, show the prospect of longer battery life at a cost of some chip area. The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage (V DD ). In this paper, using atomistic quantum models that are in agreement with experimental TFET devices, we are reviewing TFETs prospects at L G = 13 nm node together with the main challenges and benefits of its implementation. Significant power savings at iso-performance to CMOS are shown for GaSb/InAs TFET, but only for performance targets which use lower than conventional V DD . Also, P-TFET current-drive is between 1× to 0.5× of N-TFET, depending on choice of I OFF and V DD . There are many challenges to realizing TFETs in products, such as the requirement of high quality III-V materials and oxides with very thin body dimensions, and the TFET's layout density and reliability issues due to its source/drain asymmetry. Yet, extremely parallelizable products, such as graphics cores, show the prospect of longer battery life at a cost of some chip area. |
| Author | Young, Ian A. Morris, Daniel H. Avci, Uygar E. |
| Author_xml | – sequence: 1 givenname: Uygar E. surname: Avci fullname: Avci, Uygar E. email: uygar.e.avci@intel.com organization: Components Res. in Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA – sequence: 2 givenname: Daniel H. surname: Morris fullname: Morris, Daniel H. organization: Components Res. in Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA – sequence: 3 givenname: Ian A. surname: Young fullname: Young, Ian A. organization: Components Res. in Technol. & Manuf. Group, Intel Corp., Hillsboro, OR, USA |
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| Cites_doi | 10.1103/RevModPhys.64.755 10.1021/nn204838m 10.1109/TED.2014.2312330 10.1109/VLSIT.2012.6242454 10.1109/JEDS.2013.2292799 10.1109/VLSIT.2010.5556187 10.1145/1594233.1594287 10.1109/NANO.2011.6144631 10.1063/1.2757593 10.1109/TED.2013.2274196 10.1109/JETCAS.2014.2361054 10.1109/IEDM.2011.6131666 10.1063/1.3386521 10.1109/TED.2005.859654 10.1109/IEDM.2011.6131665 10.1109/LED.2007.901273 10.1109/VLSIT.2012.6242522 10.1109/MM.2013.75 |
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| Keywords | Tunnel field-effect transistor (TFET) Steep-slope |
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| Snippet | The tunnel field-effect transistor (TFET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating... |
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| SubjectTerms | Doping Logic gates MOSFET Silicon steep-slope TFET Tunneling |
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| Title | Tunnel Field-Effect Transistors: Prospects and Challenges |
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