Avci, U. E., Morris, D. H., & Young, I. A. (2015). Tunnel Field-Effect Transistors: Prospects and Challenges. IEEE journal of the Electron Devices Society, 3(3), 88-95. https://doi.org/10.1109/JEDS.2015.2390591
Chicago Style (17th ed.) CitationAvci, Uygar E., Daniel H. Morris, and Ian A. Young. "Tunnel Field-Effect Transistors: Prospects and Challenges." IEEE Journal of the Electron Devices Society 3, no. 3 (2015): 88-95. https://doi.org/10.1109/JEDS.2015.2390591.
MLA (9th ed.) CitationAvci, Uygar E., et al. "Tunnel Field-Effect Transistors: Prospects and Challenges." IEEE Journal of the Electron Devices Society, vol. 3, no. 3, 2015, pp. 88-95, https://doi.org/10.1109/JEDS.2015.2390591.
Warning: These citations may not always be 100% accurate.