Finite element simulations of compositionally graded InGaN solar cells

The solar power conversion efficiency of compositionally graded In x Ga 1− x N solar cells was simulated using a finite element approach. Incorporating a compositionally graded region on the InGaN side of a p-GaN/n-In x Ga 1− x N heterojunction removes a barrier for hole transport into GaN and incre...

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Published inSolar energy materials and solar cells Vol. 94; no. 3; pp. 478 - 483
Main Authors Brown, G.F., Ager, J.W., Walukiewicz, W., Wu, J.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.03.2010
Subjects
Composition grading
Conversion
Device modeling
Finite element method
Gallium nitrides
Heterojunction
Indium gallium nitrides
InGaN
Mathematical analysis
Photovoltaic cells
Simulation
Solar cells
Solar power generation
InGaN
Device modeling
Composition grading
Heterojunction
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ISSN0927-0248
1879-3398
DOI10.1016/j.solmat.2009.11.010

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Summary:The solar power conversion efficiency of compositionally graded In x Ga 1− x N solar cells was simulated using a finite element approach. Incorporating a compositionally graded region on the InGaN side of a p-GaN/n-In x Ga 1− x N heterojunction removes a barrier for hole transport into GaN and increases the cell efficiency. The design also avoids many of the problems found to date in homojunction cells as no p-type high-In content region is required. Simulations predict 28.9% efficiency for a p-GaN/n-In x Ga 1− x N/n-In 0.5Ga 0.5N/p-Si/n-Si tandem structure using realistic material parameters. The thickness and doping concentration of the graded region was found to substantially affect the performance of the cells.
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ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2009.11.010