Thermal influence on performance characteristics of double gate MOSFET biosensors with gate stack configuration

This study observes the MOSFET's performance concerning several biomolecules for use as a biosensor device. The double gate MOSFET with gate stack configuration has been chosen as the suggested device to surpass the limitations of short-channel effects (SCEs). The cavity was created to restrict...

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Published inDiscover applied sciences Vol. 6; no. 9; p. 447
Main Authors Das, Satish K., Biswal, Sudhansu M., Giri, Lalat Indu, Swain, Dibyanshu
Format Journal Article
LanguageEnglish
Published Cham Springer International Publishing 17.08.2024
Springer Nature B.V
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Online AccessGet full text
ISSN3004-9261
2523-3963
3004-9261
2523-3971
DOI10.1007/s42452-024-06055-1

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Summary:This study observes the MOSFET's performance concerning several biomolecules for use as a biosensor device. The double gate MOSFET with gate stack configuration has been chosen as the suggested device to surpass the limitations of short-channel effects (SCEs). The cavity was created to restrict the passage of charged and uncharged biological molecules so that they could be detected. These molecules fill the cavity, changing the device's electrical properties. The Double Gate MOSFET (DG-MOSFET) biosensor is subject to limitations such as Short Channel Effects (SCEs) and issues with the power supply. The suggested device decreased SCEs and it also demonstrates the potential benefits of having DG-MOSFETs with gate stacking for biosensor applications. Comparison of transconductance, the generating factor for transconductance, and sensitivity parameters such as Id and Vth sensitivity and Ion/Ioff sensitivity has been carried out in this study. Article Highlights The variation of temperature can influence the mobility of charge carriers within the semiconductor, affecting the conductance of the sensor. Depending on the specific biomolecule being detected, changes in temperature can modulate the interaction between the biomolecule and the sensor surface, leading to alterations in the electrical properties of the device and these changes can be precisely measured, thereby enhancing the sensitivity of detection. By systematically varying the temperature, researchers can explore the thermodynamic and kinetic aspects of the binding events, allowing for fine-tuning of the sensor performance to meet specific application requirements .
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ISSN:3004-9261
2523-3963
3004-9261
2523-3971
DOI:10.1007/s42452-024-06055-1