Growth of CdS crystals by the physical vapor transport method

Based on the physical vapor transport （PVT） method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this config...

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Bibliographic Details
Published in	Journal of semiconductors Vol. 30; no. 10; pp. 17 - 20
Main Author	程红娟徐永宽杨巍于祥潞严如岳赖占平
Format	Journal Article
Language	English
Published	IOP Publishing 01.10.2009
Subjects	CdS X射线衍射谱传输方法对流运输晶体生长气相传输物理硫化镉晶体
Online Access	Get full text
ISSN	1674-4926
DOI	10.1088/1674-4926/30/10/103002

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Summary:	Based on the physical vapor transport （PVT） method, the growth of large-size CdS crystals inside a vertical semi-closed tube is studied. Firstly, in order to ensure 1D diffusion-advection transport, multi-thin tubes are used in the growth tube. The XRD spectra of the CdS crystal grown in this configuration indicates that the crystal quality has clearly been improved, where the FWHM is 58.5 arcsec. Secondly, theoretical and experimental growth rates under different total pressures are compared; the results show that the experiential growth rate equation is valid for our semi-tube growth, and it could be used to estimate the growth rate and maximum growth time under different total pressures.
Bibliography:	the saturated vapor pressure CdS CdS; growth rate; growth surface; the saturated vapor pressure growth rate growth surface 11-5781/TN TP311.13 TN248.5
ISSN:	1674-4926
DOI:	10.1088/1674-4926/30/10/103002