Simulation for signal charge transfer of charge coupled devices

• Published in: Journal of semiconductors Vol. 30; no. 12; pp. 42 - 49
• Main Author: 王祖军 刘以农 陈伟 唐本奇 肖志刚 黄绍艳 刘敏波 张勇
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2009
• Subjects: 半导体器件; 器件模拟; 数值处理; 电子密度; 电荷耦合器件; 电荷转移效率; 细胞信号; 藕合
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/12/124007

Physical device models and numerical processing methods are presented to simulate a linear buried channel charge coupled devices （CCDs）. The dynamic transfer process of CCD is carried out by a three-phase clock pulse driver. By using the semiconductor device simulation software MEDICI, dynamic transfer pictures of signal charges cells, electron concentration and electrostatic potential are presented. The key parameters of CCD such as charge transfer efficiency （CTE） and dark electrons are numerically simulated. The simulation results agree with the theoretic and experimental results.