A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

• Published in: Journal of semiconductors Vol. 30; no. 12; pp. 108 - 112
• Main Author: 赵振宇 张民选 陈书明 陈吉华 李俊丰
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2009
• Subjects: 单事件; 技术; 暂态; 环路滤波器; 电荷泵; 设计; 辐射加固; 锁相环
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/12/125009

A radiation-hardened-by-design （RHBD） technique for phase-locked loops （PLLs） has been developed for single-event transient （SET） mitigation. By presenting a novel SET-resistant complementary current limiter （CCL） and implementing it between the charge pump （CP） and the loop filter （LPF）, the PLL＇s single-event susceptibility is significantly decreased in the presence of SETs in CPs, whereas it has little impact on the loop parameters in the absence of SETs in CPs. Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator （VCO） by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%. Moreover, the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift, as well as a single-event strike.