High-Current Multi-Finger Mesa InGaAs/InP DHBTs

• Published in: Chinese physics letters Vol. 26; no. 12; pp. 247 - 249
• Main Author: 金智 程伟 苏永波 刘新宇 徐安怀 齐鸣
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.12.2009
• Subjects: 双异质结; 双极晶体管; 大电流; 最高振荡频率; 电流增益; 相互作用; 铟镓砷
• ISSN: 0256-307X; 1741-3540
• DOI: 10.1088/0256-307X/26/12/128502

Characteristics of single- and multi-finger mesa InGaAs/InP double heterojunction bipolar transistors （DHBTs） are compared. The current gain decreases with the increasing number nf of the emitter fingers due to the mutual thermal interaction between the fingers. The Kirk current can be as high as 150mA for four-finger DHBT. No degradation of the peak of the current gain cutoff frequency ft is found for multi-finger DHBTs. The peak of the maximum oscillation frequency fmax decreases with an increase of nf due to the increasing parasitic resistance of the base. The results are very helpful for applications of the common-base DHBTs in power amplifiers operating at very high frequencies.