Estimation of electron mobility of n-doped 4, 7-diphenyl-1, 10-phenanthroline using space-charge-limited currents

• Published in: Journal of semiconductors Vol. 30; no. 11; pp. 63 - 66
• Main Author: 希扎尔·乌尔·哈克 鲁富翰 蒋雪茵 张志林 张小文 张良 李俊
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.11.2009
• Subjects: n掺杂; 二苯基; 估计; 流动; 电子迁移率; 电流测量; 空间电荷限制电流; 菲
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/30/11/114009

The electron mobilities of 4, 7-diphenyl-1, 10-phenanthroline （BPhen） doped 8-hydroxyquinolinatolithium （Liq） at various thicknesses （50-300 nm） have been estimated by using space-charge-limited current measurements. It is observed that the electron mobility of 33 wt% Liq doped BPhen approaches its true value when the thickness is more than 200 rim. The electron mobility of 33 wt% Liq doped BPhen at 300 nm is found to be -5.2 × 10^-3 cm^2/（V.s） （at 0.3 MV/cm） with weak dependence on electric field, which is about one order of magnitude higher than that of pristine BPhen （3.4 × 10^-4 cm^2/（V.s）） measured by SCLC. For the typical thickness of organic light-emitting devices, the electron mobility of doped BPhen is also investigated.