A Semiphysical Large-Signal Compact Carbon Nanotube FET Model for Analog RF Applications

• Published in: IEEE transactions on electron devices Vol. 62; no. 1; pp. 52 - 60
• Main Authors: Schroter, Michael, Haferlach, Max, Pacheco-Sanchez, Anibal, Mothes, Sven, Sakalas, Paulius, Claus, Martin
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.01.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Capacitance; Carbon nanotube field-effect transistor (CNTFET); CNTFETs; compact transistor modeling; Electron tubes; high-frequency circuit design; Integrated circuit modeling; Logic gates; Mathematical model; Radio frequency; compact transistor modeling; Carbon nanotube field-effect transistor (CNTFET); high-frequency circuit design
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2014.2373149

A compact large-signal model, called Compact Carbon Nanotube Model (CCAM), is presented that accurately describes the shape of DC and small-signal characteristics of fabricated carbon nano-tube FETs (CNTFETs). The new model consists of computationally efficient and smooth current and charge formulations. The model allows, for a given gate length, geometry scaling from single-finger single-tube to multifinger multitube transistors. Ambipolar transport, temperature dependence with self-heating, noise, and a simple trap model have also been included. The new model shows excellent agreement with the data from both the Boltzmann transport equation and measurements of Schottky-barrier CNTFETs and has been implemented in Verilog-A, making it widely available across circuit simulators.