Plasma Processing of Boron-Doped Nano-Crystalline Diamond Thin Film Fabricated on Poly-Crystalline Diamond Thick Film

• Published in: Plasma science & technology Vol. 12; no. 4; pp. 433 - 436
• Main Author: 熊礼威 刘繁 汪建华 满卫东 翁俊 刘长林
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.08.2010
• Subjects: Carrier density; Electrical properties; Nanocrystals; Plasma processing; Scanning electron microscopy; Secondary ion mass spectrometry; Secondary ion mass spectroscopy; Thick films; Thin films; 加工制作; 多晶硅; 等离子体增强化学气相沉积; 等离子体处理; 纳米晶; 金刚石厚膜; 金刚石薄膜
• ISSN: 1009-0630
• DOI: 10.1088/1009-0630/12/4/10

Plasma treatments of boron-doped nano-crystalline diamond （NCD） thin films were carried out in order to improve their electrical properties of the films. Boron-doped NCD thin films were fabricated on well polished poly-crystalline diamond （PCD） thick films in a microwave plasma enhanced chemical vapor deposition （MPCVD） reactor, then they were processed in methane, ar- gon, hydrogen and B2H~ （0.1% diluted by H~） plasmas, respectively. Scanning electron microscopy （SEM） and atomic force microscope （AFM） results show that the surface morphology changed lit- tle during the 10 min treatment. Secondary ion mass spectroscopy （SIMS） results indicate that B2H6 plasma was efficient for increasing boron concentration in NCD films, while the carrier anal- yses demonstrates that CH4 plasma processing was effective to activate the dopants and resulted in good electrical properties.