Influence of varied doping structure on photoemissive property of photocathode

• Published in: Chinese physics B Vol. 20; no. 4; pp. 356 - 361
• Main Author: 牛军 张益军 常本康 熊雅娟
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.04.2011
• Subjects: GaAs光电阴极; 发射性能; 散货运输; 电子数; 电子能量分布; 量子效率
• ISSN: 1674-1056; 2058-3834
• DOI: 10.1088/1674-1056/20/4/044209

The built-in electric fields within a varied doping GaAs photocathode may promote the transport of electrons from the bulk to the surface, thus the quantum efficiency of the cathode can be enhanced remarkably. But this enhancement, which might be due to the increase in either the number or the energy of electrons reaching the surface, is not clear at present. In this paper, the energy distributions of electrons in a varied doping photocathode and uniform doping photocathode before and after escaping from the cathode surface are analysed, and the number of electrons escaping from the surface in different cases is calculated for the two kinds of photocathodes. The results indicate that the varied doping structure can not only increase the number of electrons reaching the surface but also cause an offset of the electron energy distribution to high energy. That is the root reason for the enhancement of the quantum efficiency of a varied doping GaAs photocathode.