Size-independent growth of pure zinc blende GaAs nanowires

• Published in: Journal of semiconductors Vol. 31; no. 7; pp. 12 - 15
• Main Author: 叶显 黄辉 郭经纬 任晓敏 黄永清 王琦
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.07.2010
• Subjects: 化学气相沉积法; 原子扩散; 有机金属; 生长; 砷化镓; 纯锌; 纳米线; 闪锌矿结构
• ISSN: 1674-4926
• DOI: 10.1088/1674-4926/31/7/073001

Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111） B substrates via Au catalyzed vapor-liquid-solid mechanism.We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure;moreover,the growth rate is independent on its diameters.It can be concluded that, direct impingement of vapor species onto the Au-Ga droplets contributes to the growth of the nanowire;in contrast,the adatom diffusion makes little contribution.The results indicate that the droplet acts as a catalyst rather than an adatom collector,larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire.